View IXFC96N15P_646630.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM
(Electrically Isolated Back Surface)
IXFC 96N15P
VDSS = 150 V ID25 = 42 A RDS(on) = 26 m < 200 ns trr
N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated
ISOPLUS 220TM E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight 1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, 1 minute Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Continuous Transient TC TC TC TC TC = 25C = 25C, pulse width limited by TJM = 25C = 25C = 25C Maximum Ratings 150 150 20 30 42 250 60 40 1.0 10 120 -55 ... +175 175 -55 ... +150 300 11...65/2.4...11 2500 3 V V V V A A A mJ J V/ns W C C C C N/lb ~V g
G D S Isolated back surface*
G = Gate S = Source
D = Drain
IS IDM, di/dt 100 A/s, VDD VDSS, TJ 175C, RG = 4 TC = 25C
Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages Easy assembly: no screws, or isolation foils required Space savings High power density Low collector capacitance to ground (low EMI)
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150 C
Characteristic Values Min. Typ. Max. 150 3.0 5.0 100 25 300 26 V V nA A A m
VGS = 10 V, ID = 48 A, Note 1 Pulse test, t 300 s, duty cycle d 2 %
(c) 2006 IXYS All rights reserved
DS99240E(03/06)
IXFC 96N15P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 35 45 3500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1000 280 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 48 A RG = 4 (External) 33 66 18 110 VGS= 10 V, VDS = 0.5 VDSS, ID = 48 A 26 59 S pF pF pF ns ns ns ns nC nC nC 1.25 K/W (TO-247, PLUS220) 0.21 K/W
Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3.
ISOPLUS220TM (IXFC) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS= 10 V; ID = 48 A, Note 1
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, IF = 25 A -di/dt = 100 A/s VR = 100 V, VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 96 250 1.5 A A V
Ref: IXYS CO 0177 R0
200 ns 600 6 nC A
Notes: 1. Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXFC 96N15P
Fig. 1. Output Characteristics @ 25C
100 90 80 150 70 9V VGS = 10V 9V 200 VGS = 10V 175
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 6V 7V 8V
125 100 8V 75 50 25 0 0 2 4 6 8 10 12 14 16 18 20
7V 6V
V D S - Volts Fig. 3. Output Characteristics @ 150C
100 90 80 VGS = 10V 9V 2.8 2.6 2.4 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 A ID = 48 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
I D - Amperes
70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 7V 6V 5V 8V
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 I D = 96A I D = 48A
V D S - Volts Fig. 5. RDS(on) Norm alized to
3.8 3.4
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Fig. Tem perature
8045 7040 TJ = 175C
D Amperes IID -- Amperes
0.5 D25 ID = 48IA Value vs. ID
R D S ( o n ) - Normalized
3 2.6 2.2 1.8 1.4 1 0.6 0 50 100 150 VGS = 15V
6035
External Lead Current Limit
30 50 25 40 20 30 15
20 10 10 5 00 -50 -50 -25 -25
VGS = 10V
TJ = 25C
200
250
00
I D - Amperes
TTC -Degrees Centigrade C - Degrees Centigrade
25 25
50 50
75 75
100 125 150 100 125 150
175 175
(c) 2006 IXYS All rights reserved
IXFC 96N15P
Fig. 7. Input Adm ittance
180 160 140 60 TJ = -40C 25C 150C
Fig. 8. Transconductance
50
g f s - Siemens
TJ = 150C 25C -40C 4 5 6 7 8 9 1 0
I D - Amperes
120 100 80 60 40 20 0
40
30 20
10 0 0 25 50 75 100 125 150 175 200
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
300 10 9 250 8 7 VDS = 75V I D = 48A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
200
VG S - Volts
TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 110
150
100
50
0
V S D - Volts
Q G - nanoCoulombs Fig. . 1 2. Fo r w ar d - Bia s Fig 12. Forw ard-Bias SafeeOperating g A r e a Saf Op e r at in Area
1000 1000
Fig. 11. Capacitance
10000 f = 1MHz
Capacitance - picoFarads
R DS(on) Limit R D S (o n ) L im it
I I D--Amperes Amperes D
C iss
100 100
25s5 s 2 100s 1 0 0 s 1ms
1000 C oss
1m s 10ms
10 10 TJ = 175C T J = 1 7 5 C TC = 25C T C = 2 5 C 1 1 DC
10m s
C rss 100 0 5 10 15 20 25 30 35 40
DC
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
1 1
10 10
V D S - Volts 1 0 0 V D S - V olts
100
1000 1000
IXFC 96N15P
Fig. 13. Maxim um Transient Therm al Resistance
10.00
R( t h ) J C - C / W
1.00
0.10
0.01 0.1 1 10 100 1000
Pulse Width - milliseconds
(c) 2006 IXYS All rights reserved

▲Up To Search▲

Price & Availability of IXFC96N15P

	To Download IXFC96N15P Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .